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| FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET September 2005 FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET 60V, 80A, 7m Features rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A High performance trench technology for extermely low Rdson Low Gate Charge High power and current handling capability Qualified to AEC Q101 RoHS Compliant Applications Motor/ Body Load Control ABS Systems Power Train Management Injection Systems DC-DC Converters and Off-Line UPS D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S (c)2005 Fairchild Semiconductor Corporation FDB5800 Rev. A 1 www.fairchildsemi.com FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 102oC, VGS = 10V) ID Continuous (TC < 90 C, VGS = 5V) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature o Ratings 60 20 80 80 14 Figure 4 652 242 1.61 -55 to 175 Units V V A A A A mJ W W/oC o Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) C Thermal Characteristics RJC RJA RJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 ( Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 2 0.62 62.5 43 oC/W oC/W o C/W Package Marking and Ordering Information Device Marking FDB5800 Device FDB5800 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 48V VGS = 0V VGS = 20V TC = 150oC 60 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 80A, VGS = 10V ID = 80A, VGS = 4.5V rDS(ON) Drain to Source On Resistance ID = 80A, VGS = 5V ID = 80A, VGS = 10V, TJ = 175oC 1.0 4.6 5.8 5.5 10 2.5 6.0 7.2 7.0 12.6 m V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 80A Ig = 1.0mA 6625 628 262 1.4 104 55 6.0 18.4 12.5 20.1 135 72 pF pF pF nC nC nC nC nC nC 2 FDB5800 Rev. A www.fairchildsemi.com FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET Switching Characteristics (VGS = 5V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 80A VGS = 5V, RGS = 2 20.3 22.0 27.1 12.1 62.1 59.0 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 80A ISD = 40A ISD = 60A, dISD/dt = 100A/s ISD = 60A, dISD/dt = 100A/s 1.25 1.0 44 57 V V ns nC Notes: 1: Starting TJ = 25C, L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3 FDB5800 Rev. A www.fairchildsemi.com FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics TC = 25C unless otherwise noted 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 140 120 100 80 60 VGS = 5V 40 20 0 RJC = 0.62C/W VGS =10V CURRENT LIMITED BY PACKAGE 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature ZJC, NORMALIZED THERMAL IMPEDANCE PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RJC + TC 10-3 10-2 10-1 100 101 SINGLE PULSE 0.01 10-5 10-4 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) VGS = 5V 100 50 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101 Figure 4. Peak Current Capability 4 FDB5800 Rev. A www.fairchildsemi.com FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics TC = 25C unless otherwise noted 1000 10s IAS, AVALANCHE CURRENT (A) ID, DRAIN TCURRENT (A) 100 100s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) SINGLE PULSE TJ = MAX RATED TC = 25oC 1 100 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1ms STARTING TJ = 25oC 10 1 10ms 100ms DC STARTING TJ = 150oC 0.1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 160 140 160 140 ID, DRAIN TCURRENT (A) 120 100 80 60 40 TA = 25oC 20 0 0 1 2 3 TA = -55oC 4 5 TA = 125oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID, DRAIN TCURRENT (A) VDS = 6V 10V 5.0V 4.5V 4.0V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 120 100 80 60 40 20 0 0 0.5 1.0 3.5V 3.0V 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics 0.016 ID = 20A 0.014 RDS(ON), ON-RESISTANCE(OHM) 0.012 TA = 175oC 0.010 0.008 0.006 0.004 0.002 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 8. Saturation Characteristics 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 80A VGS = 10V - 40 0 40 80 120 TJ, AMBIENT TEMPERATURE (oC) 160 200 Figure 9. On-Resistance Variation vs Gate-toSource Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 FDB5800 Rev. A www.fairchildsemi.com FDB5800 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics TC = 25C unless otherwise noted 1.4 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250A 1.2 1.2 NORMALIZED GATE THRESHOLD VOLTAGE 1.0 ID = 250A 1.1 0.8 0.6 1.0 0.4 0.2 - 80 - 40 0 40 80 120 TJ, AMBIENT TEMPERATURE (oC) 160 200 0.9 - 80 - 40 0 40 80 120 TJ, AMBIENT TEMPERATURE (oC) 160 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 20000 10000 CISS Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 VDD =30V VGS, GATE- SOURCE VOLTAGE 8 CAPACITANCE (pF) 6 COSS 1000 4 WAVEFORMS IN ASCENDING ORDER: ID = 80A ID = 1A f = 1MHz VGS = 0V 100 0.1 1 CRSS 2 0 10 100 0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current 6 FDB5800 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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